Mg adsorption on Si„001... surface from first principles
نویسنده
چکیده
First-principles calculations using density functional theory based on norm-conserving pseudopotentials have been performed to investigate the Mg adsorption on the Si~001! surface for 1/4, 1/2, and 1 monolayer ~ML! coverages. For both 1/4 and 1/2 ML coverages it has been found that the most favorable site for the Mg adsorption is the cave site between two dimer rows consistent with the recent experiments. For the 1 ML coverage we have found that the most preferable configuration is when both Mg atoms on 231 reconstruction occupy the two shallow sites. We have found that the minimum energy configurations for 1/4 ML coverage is a 232 reconstruction while for the 1/2 and 1 ML coverages they are 231.
منابع مشابه
First - principles study of adsorption and diffusion on Ge / Si ( 001 ) - ( 2 · 8 ) and Ge / Si ( 105 ) - ( 1 · 2 ) surfaces
Using first-principles total-energy calculations, we have investigated the adsorption and diffusion of Si and Ge adatoms on Ge/ Si(001)-(2 · 8) and Ge/Si(105)-(1 · 2) surfaces. The dimer vacancy lines on Ge/Si(001)-(2 · 8) and the alternate SA and rebonded SB steps on Ge/Si(105)-(1 · 2) are found to strongly influence the adatom kinetics. On Ge/Si(001)-(2 · 8) surface, the fast diffusion path i...
متن کاملFirst-Principles Study of Ethylene on Ge(001)sElectronic Structures and STM Images
By using the first-principles density functional theory, we calculate the partial charge densities and STM images for the intradimer di-σ and interdimer end-bridge adsorption configurations of ethylene on Ge(001). Our simulated STM images show the effects of ethylene adsorption and clarify that, although STM images and surface structures evolve as the adsorption sites of ethylene on Ge(001), th...
متن کاملHydrogen Induced Si Surface Segregation on Ge-Covered Si(001)
Using Fourier transform infrared-attenuated total reflectance spectroscopy in conjunction with hydrogen adsorption to probe surface layer composition, we observe a reversible place exchange between Ge and Si on Ge-covered Si(001) when the surface is dosed with atomic H at elevated temperatures. First-principles calculations confirm a thermodynamic driving force for this place exchange. To expla...
متن کاملAdsorption processes of hydrogen molecules on SiC(001), Si(001) and C(001) surfaces
Adsorption processes of hydrogen molecules on the Si(001)-(2× 1) and C(001)-(2× 1) surfaces are discussed in light of our previous studies of H2 adsorption on the related SiC(001)-c(4× 2) surface. Very amazingly, there are pathways above the latter on which hydrogen molecules can adsorb dissociatively at room temperature. One of these pathways has not been considered before for adsorption of H2...
متن کاملPhysical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond.
We perform first-principles calculations to explore the physical origin of hydrogen-induced semiconductor surface metallization observed in beta-SiC(001)-3 x 2 surface. We show that the surface metallization arises from a novel mechanism of n-type doping of surface band via formation of hydrogen bridge bonds (i.e., Si-H-Si complex). The hydrogen strengthens the weak Si-Si dimers in the subsurfa...
متن کامل